PISA – Helios G4 UC - Dual Beam (SEM-FIB)

One key feature of the FIB is the fast and easy TEM sample preparation. The FEI Helios G4 UC Dual Beam is part of the fourth generation of the leading Helios Dual Beam family. It combines the innovative Elstar electron column with high-current UC+ technology for extreme high-resolution imaging and the highest materials contrast with the superior Tomahawk ion column for the fastest, easiest, and most precise high-quality sample preparation. In addition to the most advanced electron and ion optics, the Helios G4 UC incorporates a suite of state-of-the-art technologies that enable simple and consistent high-resolution S/TEM and Atom Probe Tomography (APT) sample preparation, as well as the highest-quality subsurface and 3D characterization, even on the most challenging samples.
The latest technological innovations of the Helios G4, in combination with the easiest to use, comprehensive software and FEI’s application expertise, allow for the fastest and easiest preparation of HR-S/TEM samples for a wide range of materials. In order to achieve the highest-quality results, final polishing with low energy ions is required to minimize surface damage on the sample. FEI’s Tomahawk Focused Ion Beam (FIB) column not only delivers high-resolution imaging and milling at high voltages, but has also excellent low voltage performance, enabling the creation of high quality TEM lamella.